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8-Pin SOP MOSFETs Silicon N-channel MOS, suitable for high-efficiency DC-DC converters and switching voltage regulators.
1. High-speed switching
2. Small gate charge: Qsw = 23 nC (typ.)
3. Small output charge: Qoss = 85.4 nC (typ.)
4. Low drain-source on-resistance: Rds(on) = 0.7 mΩ (typ.) (Vgs = 10 V)
5. Low leakage current: Idss = 10 µA (max) (Vds = 40 V)
6. Enhancement mode: Vth = 1.4 to 2.4 V (Vds = 10 V, Id = 1.0 mA)
Operating temperature: – 55°C to 175°C (TJ)
Mounting type: surface mount
FET type: N-channel
Number of channels: 1 Channel
Drain to source voltage: 40V
Continuous drain current: 150A
Drain-source resistance: 850uOhms
Gate-source threshold voltage: 1.4V
Power dissipation: 170W
